By Topic

Intermediate Digital Monolithic Pixel Sensor for the EUDET High Resolution Beam Telescope

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

21 Author(s)

A high resolution beam telescope, based on CMOS Monolithic Active Pixels Sensors (MAPS), is being developed under the EUDET collaboration, a coordinated detector R&D program for a future international linear collider. A very good spatial resolution < 5 mum, a fast readout time of 100 mus for the whole array (136 times 576 pixels) and a high granularity can be obtained with this technology. A recent fast MAPS chip, designed in AMS CMOS 0.35 mum Opto process with 14 mum epitaxial layer and called MIMOSA22, was submitted to foundry. MIMOSA22 has an active area of 26.5 mm2 with a pixel pitch of 18.4 mum arranged in an array of 576 rows by 136 columns where 8 columns have analog test outputs and 128 have their outputs connected to offset compensated discriminator stages. The pixel array is divided in seventeen blocks of pixels, with different amplification gain, diode size, pixel architecture and is addressed row-wise through a serially programmable (JTAG) sequencer. Discriminators have a common adjustable threshold with internal DAC. MIMOSA22 is the last chip (IDC-Intermediate Digital Chip), before the final sensor of the EUDET-JRA1 beam telescope, which will be installed on the 6 GeV electron beam line at DESY. In this paper, laboratory test results on analog and digital parts are presented. Test beam results, obtained with a 120 GeV pion beam at CERN, are also presented. In the last part of the paper, results on irradiated chips are given.

Published in:

IEEE Transactions on Nuclear Science  (Volume:56 ,  Issue: 3 )