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Thermomechanical Stresses Analysis of a Single Event Burnout Process

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3 Author(s)
Tais, C.E. ; Fac. Regional Villa Maria, Univ. Tecnol. Nac., Villa Maria ; Romero, E. ; Demarco, G.L.

This work analyzes the thermal and mechanical effects arising in a power Diffusion Metal Oxide Semiconductor (DMOS) during a Single Event Burnout (SEB) process. For studying these effects we propose a more detailed simulation structure than the previously used by other authors, solving the mathematical models by means of the Finite Element Method. We use a cylindrical heat generation region, with 5 W, 10 W, 50 W and 100 W for emulating the thermal phenomena occurring during SEB processes, avoiding the complexity of the mathematical treatment of the ion-semiconductor interaction.

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Nuclear Science, IEEE Transactions on  (Volume:56 ,  Issue: 3 )