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This paper provides a review of the recent developments of self-organized In(Ga)As/Ga(Al)As quantum dot lasers grown directly on Si, as well as their on-chip integration with Si waveguides and quantum-well electroabsorption modulators. A novel dislocation reduction technique, with the incorporation of self-organized In(Ga,Al)As quantum dots as highly effective three-dimensional dislocation filters, has been developed to overcome issues associated with the material incompatibility between III-V materials and Si. With the use of this technique, quantum dot lasers grown directly on Si exhibit relatively low threshold current (J th=900 A/cm2) and very high temperature stability (T 0=278 K). Integrated quantum dot lasers and quantum-well electroabsorption modulators on Si have been achieved, with a coupling coefficient of more than 20% and a modulation depth of ~100% at a reverse bias of 5 V. The monolithic integration of quantum dot lasers with both amorphous and crystalline Si waveguides, fabricated using plasma-enhanced chemical-vapor deposition and membrane transfer, respectively, has also been demonstrated.
Date of Publication: July 2009