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A high-frequency CMOS injection-locked frequency divider (ILFD) is presented by using the distributed LC, series inductor peaking, and multiple-injection techniques. The theoretical analysis for the aforementioned techniques will be given. This ILFD has been fabricated in a 65-nm CMOS process. The core area is 0.4 mm times 0.36 mm without pads. The measured locking range is from 104 to 112.8 GHz, and its power consumption is 7.2 mW from a supply of 1.2 V.