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Ultrashort dead time of photon-counting InGaAs avalanche photodiodes

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6 Author(s)
Dixon, A.R. ; Toshiba Research Europe Ltd., Cambridge Research Laboratory, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom ; Dynes, J.F. ; Yuan, Z.L. ; Sharpe, A.W.
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We report a 1.036 GHz gated Geiger mode InGaAs avalanche photodiode with a detection dead time of just 1.93 ns. This is demonstrated by full recovery of the detection efficiency two gate cycles after a detection event, as well as a measured maximum detection rate of 497 MHz. As an application, we measure the second order correlation function g(2) of the emission from a diode laser with a single detector that works reliably at high speed owing to the extremely short dead time of the detector. The device is ideal for high bit rate fiber wavelength quantum key distribution and photonic quantum computing.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 23 )

Date of Publication:

Jun 2009

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