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Thin hermetic passivation of semiconductors using low temperature borosilicate glass - benchmark of a new wafer-level packaging technology

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7 Author(s)
Leib, J. ; MSG Lithoglas AG, Berlin ; Gyenge, O. ; Hansen, U. ; Maus, S.
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A novel approach on wafer-level passivation using a thin, hermetic borosilicate glass layer replacing the polymers in redistribution is presented here. The technology will be benchmarked to those conventional technologies. The glass layer is deposited at low temperatures (T<100degC) using a plasma-enhanced e-beam deposition and can be structured by a lift-off process using a standard photoresist process for masking. The process flow is fully compatible with standard CMOS post processing and is integrated in a state-of-the-art production environment.

Published in:

Electronic Components and Technology Conference, 2009. ECTC 2009. 59th

Date of Conference:

26-29 May 2009