Cart (Loading....) | Create Account
Close category search window

Low temperature multi layer stack wafer bonding technology development

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Won Kyu Jeung ; Samsung Electro-Mech. Co., Ltd., Suwon ; Chang Hyun Lim ; Sung Yi

A new wafer bonding approach for 3-D packaging is designed fabricated and tested. We can summarize device market trend in next few words like Low cost, small form factor, integration, high performance, etc. During the last decades, 3-D wafer level packaging (3-D WLP) is highlighted as the next generation packaging method for satisfying market needs. 3-D WLP method has many advantages like low cost (wafer batch process), high performance (shorter electrical length), small form factor (3-D interconnection), low assembly cost and so on. One of the key technologies of 3-D packaging is wafer bonding. In wafer bonding field, low process temperature, high hermeticity, high reliability, multi layer stack and low process cost are main technical stream. Among various fabrication methods polymer bonding, eutectic bonding, silicon fusion bonding and anodic bonding are generally used. In case of polymer bonding, it has difficulty in high hermeticity and high reliability. In case of eutectic bonding, it has very high material cost compared to others. In case of silicon fusion bonding and anodic bonding has very high process temperature. In this paper, new anodic bonding technique is proposed for satisfying low cost, low process temperature, high hermeticity and multi layer stack. Through suggested bonding mechanism, more than 9 glasses to silicones sandwich layer is anodic ally bonded together simultaneously under 200 degree. Obviously, realized sample has very high hermeticity and bonding strength.

Published in:

Electronic Components and Technology Conference, 2009. ECTC 2009. 59th

Date of Conference:

26-29 May 2009

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.