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Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power Amplifiers

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3 Author(s)
Andrews, J.M. ; Garmin Int., Olathe, KS ; Grens, C.M. ; Cressler, J.D.

Most bipolar-transistor compact models incorporate some level of self-heating capability in order to determine the impact of thermal effects on circuit performance. Techniques for predicting mutual-thermal-coupling effects, however, are not readily available within most commercial CAD platforms. Presented in this brief is a technique which allows for the easy modification of design-kit-supplied models to predict and optimize mutual thermal coupling using commonly available CAD tools such as Cadence and Spectre.

Published in:

Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 7 )

Date of Publication:

July 2009

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