Referenced Items are not available for this document.
This paper presents a new original approach to power amplifier design, which is mainly based on low-frequency nonlinear empirical electron device (ED) characterization. The proposed technique enables the same level of accuracy provided by expensive load-pull measurement systems to be obtained through a relatively simple and low-cost setup. Moreover, ED currents and voltages related to reliability issues can be directly monitored. Different experimental examples based on power GaAs and GaN field-effect transistors are provided to demonstrate the validity of the proposed approach.
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:57
,
Issue:
7
)
Date of Publication: July 2009
- Page(s):
- 1743 - 1752
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 10776234
- Digital Object Identifier :
- 10.1109/TMTT.2009.2022816
- Product Type:
- Journals & Magazines
- Date of Publication :
- 12 June 2009
- Date of Current Version :
- 10 July 2009
- Issue Date :
- July 2009
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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