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Radiation-induced surface leakage currents in silicon microstrip detectors

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5 Author(s)
A. D. Foland ; Lab. of Nucl. Studies, Cornell Univ., Ithaca, NY, USA ; J. P. Alexander ; P. I. Hopman ; P. C. Kim
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After exposure to X-rays and UV light, we have observed induced leakage currents in silicon microstrip detectors designed for CLEO III. UV measurements have shown that the damage is confined to the Si-SiO2 interface. The damage is manifested only as a leakage current without additional 1/f noise or significant changes to detector parameters. The damage rate is measured to be 5±1 nA/cm2 /kRad for 20 keV X-rays

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IEEE Transactions on Nuclear Science  (Volume:43 ,  Issue: 3 )