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Pixel frontend electronics in a radiation hard technology for hybrid and monolithic applications

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4 Author(s)
F. Pengg ; CERN, Geneva, Switzerland ; M. Campbell ; E. H. M. Heijne ; W. Snoeys

Pixel detector readout cells have been designed in the radiation hard DMILL technology and their characteristics evaluated before and after irradiation to 14 Mrad. The test chip consists of two blocks of six readout cells each. Two different charge amplifiers are implemented, one of them using a capacitive feedback loop, the other the fast signal charge transfer to a high impedance integrating node. The measured equivalent noise charge is 110e(-) r.m.s. before and 150e(-) r.m.s. After irradiation. With a discriminator threshold set to 5000e(-), which reduces for the same bias setting to 4000e(-) after irradiation, the threshold variation is 300e(-) r.m.s. and 250e(-) r.m.s. Respectively. The time walk is 40 ns before and after irradiation. The use of this SOI technology for monolithic integration of electronics and detector in one substrate is under investigation

Published in:

IEEE Transactions on Nuclear Science  (Volume:43 ,  Issue: 3 )