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Physics-Based Simulation of Carrier Velocity in 2-Dimensional P-Type MOSFET

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7 Author(s)

The carrier velocity for 2-dimensional (2-D) p-type nanostructure was simulated in this paper. According to the energy band diagram, the effective mass (m*) in the p-type silicon is mostly dominated by heavy hole because of the large gap between heavy hole and light hole in k = 0. The carrier concentration calculation for 2-D, based on the Fermi-Dirac statistic on the order of zero (F0 ), was applied to obtain the intrinsic velocity of carrier, in the term of thermal velocity vth. The results for 2-D carrier velocity were modeled and simulated, and the comparison for degenerate and non-degenerate regime is presented for various temperature and concentration. It is revealed that the velocity is strongly dependent on concentration and becomes independent of temperature at high concentration.

Published in:

Modelling & Simulation, 2009. AMS '09. Third Asia International Conference on

Date of Conference:

25-29 May 2009