By Topic

Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7×1015 n/cm2

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Li, Z. ; Brookhaven Nat. Lab., Upton, NY, USA ; Ghislotti, G. ; Kraner, H.W. ; Li, C.J.
more authors

Current-based microscopic defect analysis methods with optical filling techniques, namely current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC), have been used to study defect levels in a high resistivity silicon detector (p+-n-n +) induced by very high fluence neutron (VHFN) irradiation (1.7×1015 n/cm2). As many as fourteen deep levels have been detected by I-DLTS. Arrhenius plots of the I-DLTS data have shown defects with energy levels ranging from 0.03 eV to 0.5 eV in the energy band gap. Defect concentrations of relatively shallow levels (Et<0.33 eV) are in the order of 1013 cm-3 , while those for relatively deep levels (Et>0.33 eV) are in the order of 1014 cm-3. TSC data have shown similar defect spectra. A full depletion voltage of about 27,000 volts has been estimated by C-V measurements for the as-irradiated detector, which corresponds to an effective space charge density (Neff) in the order of 2×1014 cm-3. Both detector leakage current and full depiction voltage have been observed to increase with elevated temperature annealing (ETA). The increase of the full depletion voltage corresponds to the increase of some deep levels, especially the 0.39 eV level. Results of positron annihilation spectroscopy have shown a decrease of total concentration of vacancy related defects including vacancy clusters with ETA, suggesting the breaking up of vacancy clusters as possible source of vacancies for the formation of single defects during the reverse anneal

Published in:

Nuclear Science, IEEE Transactions on  (Volume:43 ,  Issue: 3 )