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On Voltage Acceleration Models of Time to Breakdown—Part II: Experimental Results and Voltage Dependence of Weibull Slope in the FN Regime

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2 Author(s)
Wu, E.Y. ; Technol. Reliability Dept., Semicond. Res. & Dev. Center, Essex Junction, VT ; Sune, J.

Based on the methodologies and experimental findings presented in Part I, we demonstrate the general applicability of the T BD exponential law of reciprocal voltage, T BD ~ exp(C/VG), in comparison with the T BD power-law model for SiO2-based dielectrics stressed in the FN regime. This is done for a wide range of oxide thicknesses and stressed in a wide range of stress voltages and temperatures. We also analyze the consistency of voltage acceleration models with the voltage dependence of the Weibull slope. This is done considering the failure percentile dependence of voltage acceleration and can explain the voltage-independent Weibull slopes reported for ultrathin oxides in the DT regime and the voltage-dependent Weibull slopes reported for thick oxides stressed in the FN regime. This paper demonstrates how the application of complementary analysis methodologies to a complete experimental database allows reaching sound conclusions about the voltage acceleration model of oxide breakdown, thus solving a long lasting controversy.

Published in:

Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 7 )

Date of Publication:

July 2009

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