Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 12:00 PM ET (12:00 - 16:00 UTC). We apologize for the inconvenience.
By Topic

Comparison of various GaAs materials used for gamma-ray pulses characterisation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Foulon, F. ; CEA, Centre d''Etudes Nucleaires de Saclay, Gif-sur-Yvette, France ; Brullot, B. ; Rubbelynck, C. ; Bergonzo, P.
more authors

Gallium arsenide resistive photoconductors are widely used for the characterisation of picosecond radiation pulses. They are used to measure both the intensity and the temporal shape of the pulse. We have investigated the influence of the physical and electrical properties of high resistivity GaAs crystals (LEC, VGF) supplied by various manufacturers on the detector response to fast visible and gamma-ray pulses. The detector characteristics: response time and sensitivity, were tested both before and after pre-irradiation with fission neutrons at integrated doses in the range 5×1014 to 1×10 16 neutrons/cm2. The original GaAs material properties were found to have a significant influence on the neutron pre-irradiated photoconductor response times and sensitivities for integrated doses up to 1×1015 neutrons/cm2

Published in:

Nuclear Science, IEEE Transactions on  (Volume:43 ,  Issue: 3 )