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A short-wavelength selective reach-through avalanche photodiode

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3 Author(s)
McIntyre, R.J. ; EG&G Optoelectron., Canada ; Webb, P.P. ; Dautet, H.

A new reach-through avalanche photodiode, designed for use with sources of short-wavelength light such as scintillators, is described. The device has a double junction p+-p-n-p--n+ structure in which the central three layers, which comprise about 99% of the device thickness, are fully depleted. The p+ light-entry surface extends across the whole device and can be placed in contact with a scintillator. The multiplying p-n junction is buried and is located about 4 μm below the p+-layer so that only primary photo-electrons generated by short-wavelength (i.e., strongly absorbed) light are fully multiplied. The p--n+ junction, or array of junctions, is located at the back of the wafer and is surrounded by a guard-ring. Typical characteristics for a device 120 μm thick and having a 25 mm2 sensitive area, are a quantum efficiency (Q.E.) of 80% at 480 nm, a capacitance of 30 pF, operating voltage of <500 V, a speed of response of ~3 ns, a noise current of less than 1 pA/Hz1/2 at a gain of 100, and an effective k value of .030

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Nuclear Science, IEEE Transactions on  (Volume:43 ,  Issue: 3 )