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DC-35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications

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5 Author(s)
Hwang, C.-J. ; Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow ; Chong, H.M.H. ; Holland, M. ; Thayne, I.G.
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A broadband low-loss, ultra-low-power consumption transmit/receive switch using high-performance 50 nm gate-length metamorphic high electron mobility transistors (MHEMTs) is presented. The single pole double throw (SPDT) monolithic switch utilises a drain contact electrode sharing concept using a two-finger MHEMT. An optimal gate width of the MHEMT was chosen for low-loss, high-isolation performance and circuit compactness. The switch shows a broadband operation from DC to 35 GHz with insertion loss less than 1.9 dB, isolation better than 27 dB, and P 1dB better than 12 dBm with DC power consumption of less than 6 muW.

Published in:

Electronics Letters  (Volume:45 ,  Issue: 12 )