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High-Temperature Operation of 1.26- \mu m Ridge Waveguide Laser With InGaAs Metamorphic Buffer on GaAs Substrate

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7 Author(s)
Arai, M. ; Nippon Telegraph & Telephone (NTT) Photonics Labs., NTT Corp., Atsugi ; Nakashima, Kiichi ; Fujisawa, T. ; Tadokoro, T.
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In this paper, we have newly developed an InGaAs metamorphic buffer on a GaAs substrate grown by metal-organic vapor-phase epitaxy, and realized a fully relaxed quasi-InGaAs substrate with low threading dislocation density. We have also successfully developed a 1.3-mu m-range ridge waveguide laser with InGaP upper cladding and InAlGaAs lower cladding layers. This laser has achieved the highest continuous-wave operating temperature (173degC) reported for a metamorphic laser. We measured the relaxation oscillation frequency from the relative intensity noise and undertook a 10-Gb/s direct modulation experiment.

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:15 ,  Issue: 3 )