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Device linearity comparisons between doped-channel and modulation-doped designs in pseudomorphic Al0.3Ga0.7 As/In0.2Ga0.8As heterostructures

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2 Author(s)
Ming-Ta Yang ; Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan ; Chan, Yi-Jen

The linearities of pseudomorphic Al0.3Ga0.7As/In0.2Ga0.8As doped-channel FET's were characterized by comparing the characteristics of modulation-doped field-effect transistors (FET's) based on dc and microwave evaluations. By using an undoped high-bandgap layer beneath the gate, the so-called parasitic MESFET-type conduction, which is common in HEMT's, can therefore be eliminated in doped-channel designs. Therefore, a wide and flat device performance together with a high current driving capability can be achieved in DCFET's. This linearity improvement in device performance suggests that doped-channel designs are more suitable for application in microwave power devices

Published in:

Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 8 )

Date of Publication:

Aug 1996

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