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Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

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6 Author(s)
Khan, M.A. ; APA Optics, APA Inc., Blaine, MN, USA ; Chen, Q. ; Yang, J.W. ; Shur, M.S.
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We report on the microwave operation of 1 μm gate AlGaN/GaN doped channel heterostructure field effect transistors (DC-HFET's) with the cutoff frequency fT of 18.3 GHz. These devices exhibit the cutoff frequency-gate length product in excess of 18 GHz/spl middot/μm, comparable to that of the state-of-the-art GaAs MESFET's. We explain these improvements in the device performance by the increased sheet carrier density in the device channel and by a reduction in the parasitic series resistances, caused by doping the device channel.

Published in:

Electron Device Letters, IEEE  (Volume:17 ,  Issue: 7 )