By Topic

Spectroscopic, topological, and electronic characterization of ultrathin a-CdTe:O tunnel barriers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Dolog, Ivan ; Department of Physics, The University of Akron, Akron, Ohio 44325-4001 ; Mallik, Robert R. ; Malz, Dan ; Mozynski, Anthony

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1647259 

Ultrathin oxygenated amorphous CdTe (a-CdTe:O) films are prepared by rf sputtering of CdTe in a background of argon or argon/nitrogen/oxygen mixtures. Atomic force microscopy (AFM) is used to characterize the films and shows that they have an island structure typical of most sputtered thin films. However, when sufficiently low powers and deposition rates are employed during sputtering, the resulting films are remarkably smooth and sufficiently thin for use as barrier layers in inelastic electron tunneling (IET) junctions. Four terminal current–voltage data are recorded for Al/a-CdTe:O/Pb tunnel junctions and conductance–voltage curves are derived numerically. WKB fits to the conductance–voltage curves are obtained using a two-component trapezoidal plus square (TRAPSQR) model barrier potential to determine values for the tunnel barrier parameters (height, shape, and width); these parameters are consistent with AFM topological measurements and values from similar devices reported in the literature. IET spectra are presented which confirm that electrons tunnel through ultrathin regions of the a-CdTe:O films, which contain aluminum oxide subregions in a manner consistent with the TRAPSQR barrier model. Because tunneling occurs predominantly through these ultrathin regions, IET spectroscopic data obtained are representative of states at, or within a few tenths of nanometers from, the surface and confirm that the a-CdTe:O surface stoichiometry is very sensitive to changes in the argon/oxygen/nitrogen concentration ratios during film growth. Full IET spectra, current–voltage, and conductance–voltage data are presented together with tunnel barrier parameters derived from (WKB) fits to the data. The results presented here indicate that inelastic electron tunneling spectroscopy is a usefu- l tool for characterizing the surface states of a-CdTe:O and possibly other photovoltaic materials. © 2004 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:95 ,  Issue: 6 )