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Schottky barrier height and nitrogen–vacancy-related defects in Ti alloyed Ohmic contacts to n-GaN

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4 Author(s)
Lin, Yow-Jon ; Department of Electrical Engineering, Feng Chia University, Taichung 407, Taiwan, Republic of China ; Chen, Yao-Ming ; Cheng, Tzyy-Jon ; Ker, Quantum

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The relationship between the Schottky barrier height and nitrogen–vacancy-related defects in Ti alloyed Ohmic contacts to n-type GaN (n-GaN) has been investigated using x-ray photoelectron spectroscopy measurements. It is shown that the alloyed Ohmic behavior of the contacts can be attributed to the presence of a large number of nitrogen–vacancy-related defects and not to the formation of lower barriers at the annealed Ti/n-GaN interface. The large number of interface states, related to the nitrogen–vacancy defects has led to the pinning of the Fermi level at 0.5 eV below the conduction-band edge, and has left the GaN surface very heavily n type, thereby forming a tunneling junction. © 2004 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:95 ,  Issue: 2 )