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Light emission from Al/HfO2/silicon diodes

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6 Author(s)
Chen, T.C. ; Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, Republic of China ; Lai, W.Z. ; Liang, C.Y. ; Chen, M.J.
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The metal–insulator–silicon light-emitting diode (MIS LED) using a high-dielectric-constant material (HfO2) is studied. The external quantum efficiency for light emission at room temperature from the MIS LED was observed to be 2.0×10-6, as compared to 0.5×10-6 for the metal–oxide–silicon (MOS) LED. The large hole concentration at the Si/HfO2 interface created by the high dielectric constant of HfO2 may be responsible for the enhancement. The emission line shape of the MIS LED can be fitted by the electron-hole plasma recombination model, similar to the MOS LED. The Al/HfO2/silicon LED with a high interface trap density has a continuous spectrum below the Si gap beside the electron-hole plasma emission, probably due to the radiative recombination between the electrons and holes via the interface states. © 2004 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:95 ,  Issue: 11 )

Date of Publication:

Jun 2004

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