By Topic

Study of thiol-induced adhesion of stressed III–V semiconductor on wax using thin film elastic relaxation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Bessueille, F. ; LEOM, UMR CNRS 5512, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully Cedex, France ; Kostrzewa, M. ; Leclercq, J.-L. ; Grenet, G.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In this paper we underline the role played by octadecylthiols as adhesion promoters on the elastic relaxation of a compressively-prestressed (0.8%) In0.65Ga0.35As thin film stuck on Apiezon-W wax. Surface morphologies by Nomarski Optical Microscopy and Atomic Force Microscopy reveal drastic changes when octadecylthiols are involved in the sticking process. In the “no-thiol” case, the surface morphology displays closely joined regularly distributed undulations (wavelength ≈4.8 μm, height ≈0.18 μm). On the contrary, in the “thiol” case, the wrinkling looks like a large-meshed wire lattice [wire–wire distance ≈(10–40 μm), height ≈0.4 μm]. These thiol-induced changes in morphology are explained as due to an energy compromise between relaxing the film stress on the one hand and stressing the self-assembled monolayer organization at the wax/film interface on the other hand. © 2004 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:95 ,  Issue: 11 )