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Existence of the CuPt-type ordering due to the surface undulation in CdxZn1-xTe epilayers grown on ZnTe buffer layers

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5 Author(s)
Lee, H.S. ; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-ku, Daejeon 305-701, Korea ; Lee, J.Y. ; Kim, T.W. ; Lee, I.
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The relationship between the CuPt-type ordering and the surface undulation in CdxZn1-xTe epitaxial layers grown on ZnTe buffer layers was investigated. The results of selected area electron diffraction pattern and transmission electron microscopy measurements showed that CuPt-type ordered structures were formed in the CdxZn1-xTe epitaxial layers. The atomic force microscopy image showed that the surface undulations were created from lattice mismatch between the CdxZn1-xTe ZnTe thin films and the GaAs substrate. The surface undulations provided the [110] steps, which enhanced the formation of CuPt-type ordering in highly strained CdxZn1-xTe epilayers. These results provide important information on the relationship between the microstructural and surface properties in lattice mismatched heteroepilayers in the CdxZn1-xTe/ZnTe system. © 2004 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:95 ,  Issue: 11 )