By Topic

Effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1603953 

The strain in AlGaN/GaN heterojunction field-effect transistors (HFETs) is examined theoretically in the context of the fully coupled equation of state for piezoelectric materials. Using a simple analytical model, it is shown that, in the absence of a two-dimensional electron gas (2DEG), the out-of-plane strain obtained without electromechanical coupling is in error by about 30% for an Al fraction of 0.3. This result has consequences for the calculation of quantities that depend directly on the strain tensor. These quantities include the eigenstates and electrostatic potential in AlGaN/GaN heterostructures. It is shown that for an HFET, the electromechanical coupling is screened by the 2DEG. Results for the electromechanical model, including the 2DEG, indicate that the standard (decoupled) strain model is a reasonable approximation for HFET calculations. The analytical results are supported by a self-consistent Schrödinger–Poisson calculation that includes the fully coupled equation of state together with the charge-balance equation. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 6 )