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Charge-Trapping-Type Flash Memory Device With Stacked High- k Charge-Trapping Layer

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8 Author(s)
Ping-Hung Tsai ; Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu ; Kuei-Shu Chang-Liao ; Te-Chiang Liu ; Tien-Ko Wang
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Operating properties of charge-trapping-type Flash memory devices with single or stacked structures on trapping layer are investigated in this letter. Improved operation and reliability characteristics can be achieved by adapting the stacked high-k films as charge-trapping layer due to the modification in the trap density and the energy level of traps, the mechanism of electron/hole transmission, and the suitable band offset. Moreover, with a small bandgap of second film in the stacked trapping layer, operating characteristics of devices are further enhanced.

Published in:

IEEE Electron Device Letters  (Volume:30 ,  Issue: 7 )