By Topic

Functional design of a pulsed two-frequency capacitively coupled plasma in CF4/Ar for SiO2 etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Maeshige, Kazunobu ; Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522, Japan ; Washio, Gentaro ; Yagisawa, Takashi ; Makabe, Toshiaki

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A capacitively coupled plasma (CCP) with a different frequency source at each of two parallel plates is a powerful tool for SiO2 etching. A time modulation of two-frequency CCP by a pulsed-power operation will be one of the practical solutions in the next generation of etchers, and will allow charging-free plasma processes for high-aspect-ratio holes or trench etching. We numerically predict the structure and functions of a pulsed two-frequency CCP in CF4(5%)/Ar, and discuss its ability to generate charge-free plasma processes. We also investigate the functional separation between plasma production by very high frequency (100 MHz) and bias voltage application by low frequency (1 MHz). Alternate injections of high-energy positive and negative ions are predicted during the off-phase of a pulsed two-frequency CCP. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:91 ,  Issue: 12 )