Referenced Items are not available for this document.
A rewriteable low-power operation nonvolatile physically flexible memristor device is demonstrated. The active component of the device is inexpensively fabricated at room temperature by spinning a TiO2 sol gel on a commercially available polymer sheet. The device exhibits memory behavior consistent with a memristor, demonstrates an on/off ratio greater than 10 000 : 1, is nonvolatile for over 1.2 times 106 s, requires less than 10 V, and is still operational after being physically flexed more than 4000 times.
Published in:
Electron Device Letters, IEEE
(Volume:30
,
Issue:
7
)
Date of Publication: July 2009
- Page(s):
- 706 - 708
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10731589
- Digital Object Identifier :
- 10.1109/LED.2009.2021418
- Product Type:
- Journals & Magazines
- Date of Publication :
- 02 June 2009
- Date of Current Version :
- 23 June 2009
- Issue Date :
- July 2009
- Sponsored by :
- IEEE Electron Devices Society
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