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New Organic Phototransistor With Bias-Modulated Photosensitivity and Bias-Enhanced Memory Effect

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2 Author(s)
Hsiao-Wen Zan ; Dept. of Photonics & Inst. of Electro- Opt. Eng., Nat. Chiao Tung Univ., Hsinchu ; Shih-Chin Kao

A simple and effective method to adjust organic thin-film transistor photosensitivity was proposed. First, the full suppression of light-induced threshold-voltage shift was successfully demonstrated by applying negative gate bias during illumination. Then, the light-induced threshold-voltage shift that was modulated from 0 to 13.5 V was achieved by changing the drain and source bias from +15 to -15 V. Plausible mechanisms were proposed and verified. After light removal, the memory ability of the threshold-voltage shift was also greatly enhanced by the bias effect. The results demonstrate a sensitive organic phototransistor with memory ability by adjusting suitable bias conditions.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 7 )