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Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition

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7 Author(s)
Kedzierski, J. ; Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA ; Pei-Lan Hsu ; Reina, A. ; Kong, Jing
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Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO2 substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 7 )