By Topic

Freestanding GaN Resonant Gratings at Telecommunication Range

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yongjin Wang ; Dept. of Nanomech., Tohoku Univ., Sendai, Japan ; Fangren Hu ; Masashi Wakui ; Kazuhiro Hane

We theoretically and experimentally demonstrate a freestanding gallium nitride (GaN) resonant grating at telecommunication range. The optical responses of the freestanding GaN resonant gratings are analyzed by the rigorous coupled-wave analysis method. The freestanding GaN resonant gratings are validated on 850-nm freestanding membrane by a combination of electron beam lithography, fast atom beam, etching, and deep reactive ion etching. The polarization properties of such freestanding GaN resonant gratings are demonstrated in reflectance measurements, and the experimental results correspond well to the theoretical model. The strong resonant peaks show a clear dependence on the duty ratio under transverse magnetic polarization, and a promising resonant peak of the fabricated freestanding GaN resonant grating, in which the grating period P is 1500 nm, the grating height h is 230 nm, and the grating width is 280 nm, is observed at 1516.4 nm with a full-width at half-maximum of 4 nm.

Published in:

IEEE Photonics Technology Letters  (Volume:21 ,  Issue: 17 )