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Control of internal stress of Co-Cr films deposited by facing targets sputtering

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3 Author(s)
Nakagawa, Shigeki ; Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan ; Kitamoto, Y. ; Naoe, Masahiko

The reduction of excessively large internal stress to zero has been succeeded by adjusting working gas pressure to the proper value in the range below 1 mtorr in a facing targets sputtering (FTS) system. In addition, the internal stress depends on the distance between facing targets in the FTS system. The origins of such a change of internal stress can be attributed to the bombarding effect by energetic particles recoiled at the target's surface with a high ejection angle

Published in:

Magnetics, IEEE Transactions on  (Volume:26 ,  Issue: 1 )

Date of Publication:

Jan 1990

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