Cart (Loading....) | Create Account
Close category search window

A revised reverse gated-diode technique for determining generation parameters in thin-film silicon-on-insulator devices and its application at high temperatures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Rudenko, T. ; Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, Kyiv 03028, Ukraine ; Kilchytska, V. ; Dessard, V. ; Flandre, D.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In this paper the reverse gated-diode technique is examined for determining the carrier generation lifetime and surface generation velocities in thin-film silicon-on-insulator (SOI) devices. Using the modeling of the gate-controlled volume and surface generation components, SOI-specific aspects of the technique are highlighted. A reliable approach for extracting generation parameters in thin-film SOI devices from reverse gated-diode measurements is proposed and validated for high temperatures. The technique is demonstrated on the devices fabricated on two different SOI materials (zone-melt recrystallized and Unibond®), as examples of volume- and surface-dominated generation current behaviors. Finally, the technique is applied to characterize Unibond® SOI devices operating in the temperature range 100–300 °C to demonstrate the model and technique applicability at high temperatures.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 9 )

Date of Publication:

May 2005

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.