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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:97 Issue:9 Help

Hole mobility of p-type β-FeSi2 thin films grown from Si/Fe multilayers

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5 Author(s)
Takakura, K. ; Kumamoto National College of Technology, 2659-2 Suya, Nishigoshi, Kikuchi, Kumamoto 861-1102, Japan ; Ohyama, H. ; Takarabe, K. ; Suemasu, T.
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The hole mobility of intentionally undoped p-type β-FeSi2 thin films grown by a multilayer method was investigated. With increasing annealing temperature and time, the hole mobility increased to approximately 450 cm2/V s at room temperature (RT). The observed hole mobility was analyzed by considering various carrier scatterings such as acoustic-phonon and polar-optical-phonon scatterings, intervalley scattering, ionized impurity scattering, and grain-boundary scattering. The nice fit of the mobility to the experimental results reveals that the polar-optical-phonon scattering determines the hole mobility at RT.

Published in:
Journal of Applied Physics  (Volume:97 ,  Issue: 9 )

Date of Publication: May 2005

Page(s):
093716 - 093716-5
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.1891279
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
May 2005

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