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Temperature dependence of the ambipolar carrier migration in a structure with InAs quantum dots grown in a strained GaInAs quantum well

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3 Author(s)
Popescu, Dan P. ; Center for High Technology Materials, University of New Mexico, 1313 Goddard Southeast, Albuquerque, New Mexico 87106 ; Eliseev, Peter G. ; Malloy, K.J.

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The lateral carrier migration in a structure with InAs quantum dots (QDs) imbedded in a Ga0.85In0.15As quantum well grown on a GaAs substrate is investigated by confocal microscopy in a temperature range from 80 to 300 K. Carrier spreading is measured by recording the ground and the first excited QD state emission. Carrier migration seems to be dominated by the diffusion in the GaAs barrier. The characteristic length of this transport phenomenon is 1.5 μm at 80 K. The characteristic migration length shows a linear increase with temperature up to a value of 1.7 μm at 150 K and then it remains constant up to 300 K. The excited-state emission is spread in a spot with a smaller radius (1.0–1.2 μm) and it has the same temperature dependence of the spreading distance as the characteristic migration length of carriers that recombine in the ground state.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 9 )

Date of Publication:

May 2005

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