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Progress in AlInN–GaN Bragg reflectors: Application to a microcavity light emitting diode

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4 Author(s)
Dorsaz, J. ; Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Quantum Electronics and Photonics, CH-1015 Lausanne, Switzerland ; Carlin, J.-F. ; Gradecak, S. ; Ilegems, M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1872197 

We report on the progress in the growth of highly reflective AlInN–GaN distributed Bragg reflectors deposited by metalorganic vapor phase epitaxy. Al1-xInxN layers with an In content around x∼0.17 are lattice-matched to GaN, thus avoiding strain-related issues in the mirror while keeping a high refractive index contrast of about 7%. Consequently, a reflectivity value as high as 99.4% at 450 nm was achieved with a 40-pair crack-free distributed Bragg reflector. We measured an average absorption coefficient α [cm-1] in the AlInN–GaN Bragg reflectors of 43±14 cm-1 at 450 nm and 75±19 cm-1 at 400 nm. Application to blue optoelectronics is demonstrated through the growth of an InGaN–GaN microcavity light emitting diode including a 12-pair Al0.82In0.18NGaN distributed Bragg reflector as bottom mirror. The device exhibits clear microcavity effects, improved directionality in the radiation pattern and an optical output power of 1.7 mW together with a 2.6% external quantum efficiency at 20 mA.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 8 )

Date of Publication:

Apr 2005

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