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Degradation mechanism of HfAlOX/SiO2 stacked gate dielectrics studied by transient and steady-state leakage current analysis

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12 Author(s)
Okada, K. ; Millenium Research for Advanced Information Technology (MIRAI), Association of Super-Advanced Electronics Technology (ASET), AIST Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan ; Mizubayashi, W. ; Yasuda, Naoki ; Ota, H.
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Degradation mechanism of stacked high-k gate dielectrics has been studied with metal-oxide-semiconductor capacitors having HfAlOX/SiO2 films of various thickness combinations. A large leakage current with a peaked shape, named as the low-voltage peak current (LVPC), has been observed in the low-voltage region even in the initial current–voltage characteristics. It has been shown that a main part of LVPC is the transient current component controlled by the process of hole injection to traps in the vicinity of the HfAlOX/SiO2 interface through the interfacial SiO2 layer. By the electrical stress, both the transient and the steady-state current components monotonically increase with time having different rates. Steady-state component has significantly larger rate than the transient component, and the same rate with the stress-induced leakage current (SILC) observed in the high-voltage region, indicating that the steady-state component of LVPC should be regarded as the SILC in the higher-voltage region extending down to the lower gate voltage region where the LVPC is observed.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 7 )