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Fabrication of InAs quantum dots in AlAs/GaAs DBR pillar microcavities for single photon sources

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7 Author(s)
Zhang, Bingyang ; Quantum Entanglement Project, ICORP, JST, Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305-4085 ; Solomon, G.S. ; Pelton, Matthew ; Plant, Jocelyn
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We report the molecular beam epitaxy growth of low-density strain-induced InAs quantum dots (QD) embedded in an AlAs/GaAs distributed Bragg reflector structure for a triggered photon source. By optimal selection of growth temperature, InAs deposited thickness and other experimental parameters, it is possible to grow low density (10/μm2) InAs quantum dots with a suitable emission wavelength for a triggered photon source. The empirical formulas for the refractive indices of AlAs and GaAs materials at high temperature over a wide wavelength range are constructed by combining high resolution x-ray diffraction, dynamic optical reflectivity, and optical reflectivity spectrum techniques. Utilizing the electron-beam lithography and electron-cyclotron-resonance plasma etching techniques, a micropost microcavity with the top diameter of 0.6 μm and the post height of 4.2 μm has been fabricated. Narrow, spectrally limited single QD emission embedded in a micropost microcavity is observed in the photoluminescence.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 7 )

Date of Publication:

Apr 2005

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