By Topic

Analysis of failures in semiconductor lasers subjected to accelerated aging

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Salvatore, R.A. ; Corning Lasertron, 9 Oak Park Drive, Bedford, Massachusetts 01730 ; Yang, F.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1874299 

An analysis technique is developed for the purpose of determining which semiconductor laser parameter is responsible for degradation. The technique allows one to distinguish between the two modes of degradation: (1) a reduction in electrical carrier injection efficiency or (2) an increase in optical loss. In the case of increasing optical loss, one can determine where longitudinally along the waveguide this degraded optical loss is occurring. Experimentally, we apply the technique to an earlier generation of high-power, single-mode 14XX-nm pump lasers under various accelerated aging conditions.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 7 )