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Analysis of failures in semiconductor lasers subjected to accelerated aging

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2 Author(s)
Salvatore, R.A. ; Corning Lasertron, 9 Oak Park Drive, Bedford, Massachusetts 01730 ; Yang, F.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1874299 

An analysis technique is developed for the purpose of determining which semiconductor laser parameter is responsible for degradation. The technique allows one to distinguish between the two modes of degradation: (1) a reduction in electrical carrier injection efficiency or (2) an increase in optical loss. In the case of increasing optical loss, one can determine where longitudinally along the waveguide this degraded optical loss is occurring. Experimentally, we apply the technique to an earlier generation of high-power, single-mode 14XX-nm pump lasers under various accelerated aging conditions.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 7 )

Date of Publication:

Apr 2005

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