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High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealing

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8 Author(s)
Kim, Kyoung-Kook ; Thin Film Compound Semiconductor Team, Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8586, Japan ; Niki, Shigeru ; Oh, Jin-Yong ; June-o Song
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We report on the growth of very high-quality Al-doped n-type ZnO epilayers on sapphire substrates using a radio-frequency (rf) magnetron sputtering technique combined with a rapid-thermal annealing. Photoluminescence (PL) and Hall measurements show that both the optical and electrical properties of the ZnO layers are significantly improved with an increasing annealing temperature up to 900 °C. For example, the samples that are grown at 600 °C and a rf power of 100 W with an Ar/O2 gas ratio of 1 give an electron concentration of 1.83×1020 cm3 and a mobility of 65.6 cm2/V s, when annealed at 900 °C for 3 min in a nitrogen ambient. Furthermore, x-ray diffraction measurements show that both the as-grown and annealed samples are of excellent crystallinity.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 6 )