By Topic

Positron beam studies of argon-irradiated polycrystal α-Zr

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Zhou, Chunlan ; Institute of High Energy Physics, Chinese Academy of Sciences, Box 918, Beijing 100039, China ; Liu, Xiaoyang ; Ma, Chuangxin ; Wang, Baoyi
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Doppler broadening spectroscopy was performed using a variable-energy positron beam to investigate the effect of defects induced by 150-keV Ar-ion-irradiated α-Zr bulk material. S parameter in the damaged layer of the as-irradiated sample induced by ion irradiation increased with the increasing implantation dose. Isochronal annealing between 350 and 800 °C in vacuum studies was carried out to investigate the thermal stability of defects in the oxide surface and damaged layer for low-dose (1×1014 cm2) and high-dose (1×1016 cm2) irradiated samples. The results of S-W plot measured at different annealing temperatures showed that the positron-trapping center had changed. The Ar-decorated voids or vacancies, which formed in high-dose implantation samples by Ar ions combining with open-volume defects, are stable and do not recover until at high annealing temperatures. Comparing the annealing behavior of the high-dose and low-dose implantation samples show that the recovery process of open-volume defects such as vacancies and voids will be delayed by the excess Ar concentration.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 6 )