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Growth mechanism of InAs quantum dots on GaAs by metal-organic chemical-vapor deposition

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3 Author(s)
Chung, Theodore ; Department of Electrical and Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801 ; Walter, Gabriel ; Holonyak, N.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1856218 

The growth parameters affecting the deposition of InAs quantum dots (QDs) by metal-organic chemical-vapor deposition are reported. Experiments with arsine pause, gas switching, and hydrogen shroud flow show that a low V/III ratio is the key to obtaining three-dimensional InAs island formation with high density and uniformity. Based on atomic force microscopy images of InAs QDs deposited under different growth conditions, a physical model for the epitaxial growth of three-dimensional islands is proposed. In this model, the InAs QD growth is governed by two types of arsenic sources at the growth surface: free arsenic atoms arriving at the boundary layer and dangling arsenic bonds available at the GaAs wafer surface. At high V/III ratio, free arsenic atoms arriving at the boundary layer are the dominant hydride species and produce a low density of InAs islands with irregular shape and polycrystalline defects. At low V/III ratio arsenic bonds on the GaAs surface are the main sites for indium atoms to attach to, thus producing high island densities and small coherent island sizes.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 5 )

Date of Publication:

Mar 2005

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