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Mass-analyzed CFx+ (x=1,2,3) ion beam study on selectivity of SiO2-to-SiN etching and a-C:F film deposition

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4 Author(s)
Yanai, Ken-ichi ; Association of Super-Advanced Electronics Technologies (ASET), 3-1 Morinosato, Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan ; Karahashi, Kazuhiro ; Ishikawa, Kenji ; Nakamura, Moritaka

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1854726 

To clarify the origins of high selectivity in SiO2-to-SiN etching in fluorocarbon gas plasma, mass-analyzed CFx+ (x=1,2,3) ions with a definite kinetic energy of 250–2000 eV were irradiated on SiN and SiO2 surfaces. Selectivity in SiO2-to-SiN etching varies greatly for different CFx+ ions. For CF3+ ions, the etch yield of SiN is almost the same as that of SiO2, causing poor selectivity. For CF+ ions, on the other hand, the etch yield of SiN is much smaller than that of SiO2. An amorphous fluorinated carbon (a-C:F) film grows without any neutral radicals on the SiN surface at energies below 1250 eV and on the SiO2 surface at energies below 500 eV due to CF+ ion irradiation. The difference in threshold energy of a-C:F film deposition causes high selectivity in SiO2-to-SiN etching. Slight etching of substrate films first takes place at the initial stage of deposition, then etching stops, and a homogeneous a-C:F film is grown. Accumulate- d carbons during the initial etching reaction modify the surface reaction layer, which causes drastic changes in reactions such as etching to “etch stop” and a-C:F film growth.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 5 )

Date of Publication:

Mar 2005

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