By Topic

Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Ratto, Fulvio ; Institut National de la Recherche Scientifique-Energie, Materiaux et Telecommunications (INRS-EMT), Université du Quebec, 1650 Boulevard Lionel Boulet, J3X 1S2 Varennes (Quebec) Canada ; Rosei, Federico ; Locatelli, Andrea ; Cherifi, Salia
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The stoichiometry of Ge/Si islands grown on Si(111) substrates at temperatures ranging from 460 to 560 °C was investigated by x-ray photoemission electron microscopy (XPEEM). By developing a specific analytical framework, quantitative information on the surface Ge/Si stoichiometry was extracted from laterally resolved XPEEM Si 2p and Ge 3d spectra, exploiting the chemical sensitivity of the technique. Our data show the existence of a correlation between the base area of the self-assembled islands and their average surface Si content: the larger the lateral dimensions of the 3D structures, the higher their relative Si concentration. The deposition temperature determines the characteristics of this relation, pointing to the thermal activation of kinetic diffusion processes.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 4 )