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Pressure effect on the magnetization of Sr2FeMoO6 thin films grown by pulsed laser deposition

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7 Author(s)
Fix, T. ; Institut de Physique et de Chimie des Matériaux de Strasbourg (IPCMS) Unite Mixte de Recherche 7504 du Centre National de la Recherche Scientifique (UMR 7504 du CNRS), Université Louis Pasteur-Ecole Européenne de Chimie, Polymères et Matériaux de Strasbourg (ULP-ECPM), 23 rue du Loess BP43 F-67034 Strasbourg, France ; Versini, G. ; Loison, J.L. ; Colis, S.
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Thin films of Sr2FeMoO6 (SFMO) are grown on SrTiO3 (001) substrates by pulsed laser deposition. The best films provide 3.2μB/f.u. at 5 K, a Curie temperature above 400 K, low roughness, high crystallinity, and low splashing. Therefore, the use of such SFMO electrodes in magnetic tunnel junctions patterned with conventional lithography is promising. Pseudomorphic epitaxial growth is obtained for thicknesses under 50 nm. Above this thickness the films do not relax homogeneously. A coherent and systematic variation of the magnetization with the deposition conditions is obtained, which highlights a high reproducibility. Under a reasonable O2 partial pressure to avoid parasite phases, the limiting factor for high magnetization is the total pressure or the deposition rate. Therefore, the deposition rate is suspected to have a strong influence on the Fe/Mo ordering. Highly magnetic samples are obtained under a low gas flow of either a 20% O2+N2 or a 0.3% O2+Ar.

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Journal of Applied Physics  (Volume:97 ,  Issue: 2 )