Cart (Loading....) | Create Account
Close category search window
 

In situ real-time spectroscopic ellipsometry study of HfO2 thin films grown by using the pulsed-source metal-organic chemical-vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Zheng, Yangdong ; Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-Ku Tokyo 152-8552, Japan ; Mizuta, H. ; Tsuchiya, Y. ; Endo, Masato
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1827912 

The HfO2 thin-film growth process is investigated by using in situ real-time spectroscopic ellipsometry (SE) technique combined with the first-principles molecular-orbital (MO) calculations of the electronic states. The HfO2 films are grown on the silicon substrate by using the pulsed-source metal-organic chemical-vapor deposition method. Particular attention is paid to the formation of an interfacial layer at the early stage of the growth process by monitoring energy-dependent dielectric constants of the film. The energy dependence of the electronic polarizabilities and dielectric constants is calculated for the amorphous HfO2, SiO2, and HfSiO4 films based on the electronic states and density of states obtained using the discrete-variational MO method with the unit cluster model. The measured SE spectra show that the average dielectric constants of the film vary gradually from those for SiO2 to those for HfO2 when the number of deposition cycles increases. By comparing the varied dielectric constants during the film growth with the calculated results, we find that the HfO2 film growth process can be divided into two stages with different growth mechanisms: SiO2 and HfxSiyOz layers are grown at the first stage, which are regarded as the interfacial layers, and the HfO- 2 layer formation becomes predominant at the second stage.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 2 )

Date of Publication:

Jan 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.