Cart (Loading....) | Create Account
Close category search window
 

Modeling of microcrystalline silicon film deposition in a capacitively coupled radio-frequency plasma reactor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Satake, Koji ; Advanced Technology Research Center, Mitsubishi Heavy Industries, Limited, 1-8-1, Sachiura, Kanazawa-ku, Yokohama, 236-8515, Japan ; Kobayashi, Yasuyuki

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1821639 

We present a numerical model of plasma-enhanced chemical-vapor deposition of hydrogenated microcrystalline silicon c-Si:H) film from SiH4 and H2 gas mixtures in a capacitively coupled radio-frequency plasma reactor. The model takes into account electron-impact, gas-phase, and surface reactions within a well-mixed reactor model. Plasma parameters such as the electron density, the electron temperature, and the electron-impact reaction rates are determined through a discharge model and used as inputs for the reactor model. The gas-phase reactions include electron-impact and neutral–neutral reactions. Some of the surface reaction rates are determined using quantum chemical calculations and transition state theory. In the reactor model, concentrations of each chemical species are calculated at steady state using mass conservation equation uniformed throughout the reactor. Numerical results of the deposition rate as a function of the plasma reactor operating parameters show good agreement with experiments. Based on the model, the correlation between μc-Si:H properties, such as the crystal grain orientation and the hydrogen content, and deposition operating parameters has been studied using a design of experiment. Finally, optimal operating parameters are investigated using optimization techniques.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 2 )

Date of Publication:

Jan 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.