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Tunneling mechanism of the 1/f noise in GaN/AlGaN heterojunction field-effect transistors

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4 Author(s)
Dmitriev, A.P. ; Solid State Electronics Division, The Ioffe Physical-Technical Institute of Russian Academy of Sciences, 194021, St. Petersburg, Russia ; Levinshtein, M.E. ; Rumyantsev, S.L. ; Shur, M.S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1931033 

We propose a model of the 1/f noise in GaN/AlGaN heterojunction field-effect transistors that links the 1/f noise to the tunneling from the two-dimensional electron gas in the device channel into the tail states near the conduction band of the GaN layer. The model predicts a fairly weak temperature dependence of the 1/f noise in the temperature interval from 50 to 600 K with the value of the Hooge parameter α within the range of 10-3–10-5. Both these predictions are in agreement with experimental data.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 12 )

Date of Publication:

Jun 2005

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