By Topic

Direct determination of the free-carrier injection density, the free-carrier absorption, and the recombination factors in double heterostructure diodes by optical phase measurements. Part III

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Reinhart, F.K. ; Laboratoire d’Optique Appliquée, Sciences et Techniques de l’Ingenieur (STI), Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1935741 

Accurate phase measurements over a temperature interval on double heterostructure laser (DH) diodes provide a means to directly measure the injected free-carrier density and the free-carrier absorption as a function of the injected current. This paper describes the underlying principles and demonstrates the validity of the simple concepts. The data permit to deduce the radiative and nonradiative recombination factors in nominally undoped active layers without taking resource to luminescence measurements. The results presented on GaAs and InGaAsP lattice matched to InP DH diodes show a good overall agreement with calculations based on a heuristic model. The radiative recombination factors at room temperature are near 5.3×10-11 and 2.0×10-11 cm3 s-1 for GaAs and for InGaAsP with a band gap of 1.122 eV, respectively. The free-carrier absorption due to the injected carriers is strongly dispersive and proportional to the 2.3rd power of the wavelength. We show a strong temperature dependence of the free-carrier absorption that is more important in InGaAsP than in GaAs. The results are internally consistent without the need of any free parameter. The phase measurements can also be used to characterize the heat chirping of the active layers under pulsed current excitation.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 12 )